As-Doped p-Type ZnO Produced by an Evaporation/Sputtering Process

Authors

David C. Look, Wright State University - Main CampusFollow
G. M. Renlund
R. H. Burgener
J. R. Sizelove

Document Type

Article

Publication Date

11-1-2004

Abstract

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn₃As₂ on a fused-quartz substrate at 350 °C; and (2) sputtering of ZnO with substrate held at 450 °C. The electrical characteristics include: resistivity of 0.4 Ω cm, a mobility of 4 cm²∕V s, and a hole concentration of about 4×10¹⁸ cm⁻³. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×10¹⁹ cm⁻³, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×10¹⁹ cm⁻³. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply As_O or the recently suggested As_Zn−2V_Zn.

Comments

Copyright © 2004, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 85.22, and may be found at http://apl.aip.org/resource/1/applab/v85/i22/p5269_s1

Repository Citation

Look, D. C., Renlund, G. M., Burgener, R. H., & Sizelove, J. R. (2004). As-Doped p-Type ZnO Produced by an Evaporation/Sputtering Process. Applied Physics Letters, 85 (22), 5269-5271.
https://corescholar.libraries.wright.edu/physics/89

DOI

10.1063/1.1825615