Document Type

Article

Publication Date

1-1-1993

Abstract

A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐insulating (2×10;7 Ω cm) molecular beam epitaxial GaAs grown at 400 °C. Although the ir photoquenching and thermal recovery characteristics are nearly identical to those of ;EL2, the thermal activation energy is only 0.65±0.01 eV, much lower than the ;EL2 value of 0.75±0.01 eV. Other properties which are different include the electron‐capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v70/i4/p465_1

DOI

10.1103/PhysRevLett.70.465

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