New AsGa Related Center in GaAs

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
J. R. Sizelove
C. E. Stutz

Document Type

Article

Publication Date

1-1-1993

Abstract

A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐insulating (2×10;7 Ω cm) molecular beam epitaxial GaAs grown at 400 °C. Although the ir photoquenching and thermal recovery characteristics are nearly identical to those of ;EL2, the thermal activation energy is only 0.65±0.01 eV, much lower than the ;EL2 value of 0.75±0.01 eV. Other properties which are different include the electron‐capture barrier energy, hyperfine constant, and magnetic circular dichroism spectrum.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v70/i4/p465_1

Repository Citation

Look, D. C., Fang, Z., Sizelove, J. R., & Stutz, C. E. (1993). New AsGa Related Center in GaAs. Physical Review Letters, 70 (4), 465-468.
https://corescholar.libraries.wright.edu/physics/213

DOI

10.1103/PhysRevLett.70.465