Semi-insulating Nature of Gas Source Molecular Beam Epitaxial InGaP Grown at Very Low Temperatures

Authors

David C. Look, Wright State University - Main CampusFollow
Y. He
J. Ramdani
N. Elmasry
S. M. Bedair

Document Type

Article

Publication Date

8-1-1993

Abstract

In_xGa_1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n‐type with a 296‐K resistivity of 9×10⁵ Ω cm, a mobility of 120 cm²/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 10⁹ Ω cm and the resistivity activation energy to 0.8 eV.

Comments

Copyright © 1993, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 63.9, and may be found at http://apl.aip.org/resource/1/applab/v63/i9/p1231_s1

Repository Citation

Look, D. C., He, Y., Ramdani, J., Elmasry, N., & Bedair, S. M. (1993). Semi-insulating Nature of Gas Source Molecular Beam Epitaxial InGaP Grown at Very Low Temperatures. Applied Physics Letters, 63 (9), 1231-1233.
https://corescholar.libraries.wright.edu/physics/46

DOI

10.1063/1.109781