Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO

Authors

F. TuomistoFollow
V. Ranki
K. Saarinen
David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

11-1-2003

Abstract

We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (E_el=2   MeV, fluence 6×10¹⁷   cm^-2) ZnO samples. The Zn vacancies are identified at concentrations of [V_Zn]≃2×10¹⁵   cm^-3 in the as-grown material and [V_Zn]≃2×10¹⁶   cm^-3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v91/i20/e205502

Repository Citation

Tuomisto, F., Ranki, V., Saarinen, K., & Look, D. C. (2003). Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO. Physical Review Letters, 91 (20), 205502.
https://corescholar.libraries.wright.edu/physics/217

DOI

10.1103/PhysRevLett.91.205502