Magnetoresistance Method To Determine GaAs and Alxga1-Xas Mobilities in Alxga1-Xas/GaAs Modulation-Doped Field-Effect Transistor Structures

Authors

David C. Look, Wright State University - Main CampusFollow
George B. Norris
W. Kopp
T. Henderson
H. Morkoç

Document Type

Article

Publication Date

8-1-1985

Abstract

Charge carrier mobilities are conveniently measured in simple, homostructure field-effect transistors (FET's) by means of the geometric magnetoresistance (GMR) technique. Heterostructure FET's, however, are more complicated because of multiple conducting regions, as well as multiple conducting bands within a given region. We apply a multilayer GMR mobility model to a frequently used heterostructure FET design, namely, the Al_0.3Ga_0.7As conduction band. In the particular MODFET structure studied here, the lowest GaAs subband mobility ranges from 5.7X10³ cm²/Vs at threshold to 6.9X10³ cm²/Vs at saturation while Al_0.3Ga_0.7As mobility is about 5X10² cm²/Vs. This is the first time that the various mobilities in MODFET structures have been separately measured.

Comments

Copyright © 1985, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 47.3, and may be found at http://apl.aip.org/resource/1/applab/v47/i3/p267_s1.

Repository Citation

Look, D. C., Norris, G. B., Kopp, W., Henderson, T., & Morkoç, H. (1985). Magnetoresistance Method To Determine GaAs and Alxga1-Xas Mobilities in Alxga1-Xas/GaAs Modulation-Doped Field-Effect Transistor Structures. Applied Physics Letters, 47 (3), 267-269.
https://corescholar.libraries.wright.edu/physics/30

DOI

10.1063/1.96186