Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN
Document Type
Article
Publication Date
2001
Abstract
Lattice-mismatched epitaxy produces a high concentration of dislocations (N-dis) in the interface region, and this region is often highly conductive, due to donor (N-D) decoration of the dislocations. Here we show that a simple postulate, N-D = alpha (N-dis/c), where c is the lattice constant and alpha a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N-dis This prediction is experimentally verified in GaN grown on Al2O3, and is also applied to other mismatched systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
Repository Citation
Look, D. C.,
Stutz, C. E.,
Molnar, R. J.,
Saarinen, K.,
& Liliental-Weber, Z.
(2001). Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN. Solid State Communications, 117 (10), 571-575.
https://corescholar.libraries.wright.edu/physics/345
DOI
10.1016/S0038-1098(01)00010-2
