Predicted Maximum Mobility in Bulk GaN

Authors

David C. Look, Wright State University - Main CampusFollow
J. R. Sizelove

Document Type

Article

Publication Date

8-1-2001

Abstract

A 300 K bulk (three-dimensional) mobility of 1245 cm²/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (N_D) and acceptor (N_A) concentrations, which are N_D = 6.7×10¹⁵ and N_A = 1.7×10¹⁵ cm⁻³. Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of N_D and N_A, leading to a maximum 300 K mobility of 1350 cm²/V s, and a maximum 77 K mobility of 19 200 cm²/V s.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 79.8, and may be found at http://apl.aip.org/resource/1/applab/v79/i8/p1133_s1

Repository Citation

Look, D. C., & Sizelove, J. R. (2001). Predicted Maximum Mobility in Bulk GaN. Applied Physics Letters, 79 (8), 1133-1135.
https://corescholar.libraries.wright.edu/physics/70

DOI

10.1063/1.1394954