Fabrication of ZnO-Based Metal-insulator-Semiconductor Diodes by Ion Implantation

Authors

David C. Look, Wright State University - Main CampusFollow
Ya I. Alivov
B. M. Ataev
M. V. Chukichev
V. V. Mamedov
V. I. Zinenko
Y. A. Agafonov
A. N. Pustovit

Document Type

Article

Publication Date

12-2004

Abstract

A ZnO-based metal-insulator-semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I-V dependences show a good rectifying diode-like behavior with a low leakage current of 10(-6) A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.

Repository Citation

Look, D. C., Alivov, Y. I., Ataev, B. M., Chukichev, M. V., Mamedov, V. V., Zinenko, V. I., Agafonov, Y. A., & Pustovit, A. N. (2004). Fabrication of ZnO-Based Metal-insulator-Semiconductor Diodes by Ion Implantation. Solid-State Electronics, 48 (12), 2343-2346.
https://corescholar.libraries.wright.edu/physics/359

DOI

10.1016/j.sse.2004.05.063