Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.
Mier, M. G.,
Look, D. C.,
Walters, D. C.,
& Beasley, D. L.
(1992). Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization. Solid-State Electronics, 35 (3), 319-323.