Deep Centers in Conductive and Semi-Insulating GaN

Authors

Z-Q. Fang
Gary C. Farlow, Wright State University - Main CampusFollow
Bruce Claflin
C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

2004

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Abstract

Unintentionally doped conductive and carbon doped semi-insulating GaN films have been characterized by deep level transient spectroscopy, thermally stimulated current spectroscopy, and photoluminescence (PL). Based on correlations with dislocation density, point defects created by electron irradiation, and deep PL bands, the major traps in GaN can be tentatively associated with N vacancies, Ga vacancies, and N interstitials.

Comments

This paper is from the 13th International Conference on Semiconducting and Insulating Materials, September 20-25, 2004 in Beijing, China.

Repository Citation

Fang, Z., Farlow, G. C., Claflin, B., & Look C. (2004). Deep Centers in Conductive and Semi-Insulating GaN. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials, 29-36.
https://corescholar.libraries.wright.edu/physics/373