Radiation Hardness of ZnO at Low Temperatures
Document Type
Article
Publication Date
6-2004
Abstract
In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (min), even at 130 K.
Repository Citation
Coşkun, C.,
Look, D. C.,
Farlow, G. C.,
& Sizelove, J. R.
(2004). Radiation Hardness of ZnO at Low Temperatures. Semiconductor Science and Technology, 19 (6), 752-754.
https://corescholar.libraries.wright.edu/physics/420
DOI
10.1088/0268-1242/19/6/016
