Photoelectrochemical Capacitance-Voltage Measurements in GaN
Document Type
Article
Publication Date
1998
Abstract
Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.
Repository Citation
Stutz, C. E.,
Mack, M.,
Bremser, M. D.,
Nam, O. H.,
Davis, R. F.,
& Look, D. C.
(1998). Photoelectrochemical Capacitance-Voltage Measurements in GaN. Journal of Electronic Materials, 27 (5).
https://corescholar.libraries.wright.edu/physics/411
DOI
10.1007/s11664-998-0182-4
