An Experimental Set-Up for In Situ Hall Measurements Under High-Energy Electron Irradiation for Wide-Bandgap Materials
Document Type
Article
Publication Date
2004
Abstract
A dc Hall-effect apparatus, based on conventional van der Pauw specimen geometry, has been developed for in situ measurements under van de Graaff electron irradiation (0.7-2.2 MeV). An associated cryostat permits ambient temperatures of 95-300 K. A key element is a flat permanent magnet of field strength 3.55 kG. Initial test measurements have been performed on wide-bandgap semiconductor materials, including an HVPE-grown AlGaN/GaN heterostructure field-effect transistor structure.
Repository Citation
Coşkun, C.,
Look, D. C.,
Farlow, G. C.,
& Fang, Z.
(2004). An Experimental Set-Up for In Situ Hall Measurements Under High-Energy Electron Irradiation for Wide-Bandgap Materials. Measurement Science & Technology, 15 (1), 297-302.
https://corescholar.libraries.wright.edu/physics/431
DOI
10.1088/0957-0233/15/1/043
