Electron Beam and Optical Depth Profiling of Quasibulk GaN

Authors

L. Chernyak
A. Osinsky
G. Nootz
A. Schulte
J. Jasinski
M. Benamara
Z. Liliental-Weber
David C. Look, Wright State University - Main CampusFollow
Richard J. Molnar

Document Type

Article

Publication Date

10-1-2000

Abstract

Electron beam and optical depth profiling of thick (5.5–64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM.

Comments

Copyright © 2000, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 77.17, and may be found at http://apl.aip.org/resource/1/applab/v77/i17/p2695_s1

Repository Citation

Chernyak, L., Osinsky, A., Nootz, G., Schulte, A., Jasinski, J., Benamara, M., Liliental-Weber, Z., Look, D. C., & Molnar, R. J. (2000). Electron Beam and Optical Depth Profiling of Quasibulk GaN. Applied Physics Letters, 77 (17), 2695-2697.
https://corescholar.libraries.wright.edu/physics/64

DOI

10.1063/1.1319530