Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow
Wook Kim
H. MorkoçFollow

Document Type

Conference Proceeding

Publication Date

3-2000

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Abstract

Deep centers in Si-doped n-GaN samples grown on sapphire by reactive molecular beam epitaxy, using different ammonia flow rates (AFRs), have been studied by deep level transient spectroscopy. In addition to five electron traps, which were also found in n-GaN layers grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy, two new centers C₁ (0.43-0.48 eV) and E₁ (0.25 eV) have been observed. C₁, whose parameters show strong electric-field effects and anomalous electron capture kinetics, might be associated with dislocations. E₁, which is very dependent on the AFR, exhibits an activation energy close to that of a center created by electron irradiation and is believed to be a defect complex involving V_N.

Comments

Presented at the 1999 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 1999.

Repository Citation

Fang, Z., Look, D. C., Kim, W., & Morkoç, H. (2000). Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy. MRS Proceedings, 595, W11.84.1.
https://corescholar.libraries.wright.edu/physics/699

DOI

10.1557/PROC-595-F99W11.84