Characterization of Near-Surface Traps in Semiconductors: GaN

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow

Document Type

Article

Publication Date

7-1-2001

Abstract

We present a simple a criterion, based on deep-level transient spectroscopy peak heights S(V_r) at two or more values of reverse bias V_r, to unequivocally determine whether or not a particular semiconductor trap is of bulk or near-surface nature. Moreover, we present an expression for S(V_r) with fitting parameters ϕ_B, the Schottky barrier height; δ, the trap penetration depth; and N_T, the trap density. Application of the method to a thick, high-quality, epitaxial GaN layer, reveals two common traps which penetrate only 2700±300 Å into the layer.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 79.1, and may be found at http://apl.aip.org/resource/1/applab/v79/i1/p84_s1

Repository Citation

Look, D. C., & Fang, Z. (2001). Characterization of Near-Surface Traps in Semiconductors: GaN. Applied Physics Letters, 79 (1), 84-86.
https://corescholar.libraries.wright.edu/physics/68

DOI

10.1063/1.1379982