Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions

Authors

David C. Look, Wright State University - Main CampusFollow
J. E. Hoelscher
J. L. Brown
G. David Via

Document Type

Article

Publication Date

5-2001

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Abstract

Differential Hall-effect measurements are used to obtain profiles of the mobility, 1, and carrier concentration, n, in a 6-1m-thick GaN layer grown on Al₂O₃ by hydride vapor phase epitaxy (HVPE). In the top 1-1m region (surface), 1 1000 cm²/V-s and n 3 x 10¹⁶ cm^-3, whereas in the bottom 0.75-im region (interface), i 50 cm²/V-s and n 2 x 10¹⁹ cm^-3. Throughout the layer, the carrier concentration correlates well with the O and Si concentrations, with [Si] dominant near the surface, and [O] dominant near the interface, proving the shallow-donor nature of O. The average mobility and carrier concentration in the top 5 1m, i.e., the "bulk" region, are close to the values deduced by a much simpler analysis, introduced previously.

Repository Citation

Look, D. C., Hoelscher, J. E., Brown, J. L., & Via, G. D. (2001). Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions. MRS Internet Journal of Nitride Semiconductor Research, 6, 10.
https://corescholar.libraries.wright.edu/physics/705