An Anomalous Deep Center (E_C-0.31 eV) in Semi-Insulating GaAs

Authors

Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1997

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Abstract

A prominent deep center in semi-insulating GaAs, T₅ at E_c×0.31 eV, has been studied by thermally stimulated current (TSC) spectroscopy using variation of illumination energy, intensity, and time. Unlike the case for most of TSC traps, the steady-state (long illumination time) peak intensity of T₅ varies with light intensity. With the additional evidence that T₅ seems to be related to both As_Ga and V_As, it is possible that a photoinduced interaction As_Ga.-V_As→V_Ga,-As_i-V_As is taking place.

Comments

Presented at the 1996 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 1997.

Repository Citation

Fang, Z., & Look, D. C. (1997). An Anomalous Deep Center (E_C-0.31 eV) in Semi-Insulating GaAs. MRS Proceedings, 442, 405.
https://corescholar.libraries.wright.edu/physics/688

DOI

10.1557/PROC-442-405