Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
Document Type
Article
Publication Date
2001
Abstract
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 3 x 10(9) cm(-2) for edge dislocations and < 1 x 10(6) cm(-2) for screw dislocations are achieved in GaN films of 0.8 m thickness. Mechanisms of dislocation generation and annihilation are discussed. Increasing the Ga to N flux ratio used during growth is found to improve the surface morphology, An unintentional electron concentration in the films of about 5 x 10(17) cm(-3) is observed, and is attributed to excess Si in the films due to a Si-cleaning step used in the substrate preparation, Results from optical characterization are correlated with the structural and electronic studies.
Repository Citation
Look, D. C.,
Ramachandran, V.,
Sagar, A.,
Feenstra, R. M.,
Greve, D. W.,
Sarney, W. L.,
Salamanca-Riba, L.,
Lee, C. D.,
Bai, S.,
Choyke, W. J.,
& Devaty, R. P.
(2001). Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy. Journal of Electronic Materials, 30 (3), 162-169.
https://corescholar.libraries.wright.edu/physics/400
DOI
10.1007/s11664-001-0010-6
