A 300 K bulk (three-dimensional) mobility of 1245 cm2/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (ND) and acceptor (NA) concentrations, which are ND = 6.7×1015 and NA = 1.7×1015 cm−3. Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of ND and NA, leading to a maximum 300 K mobility of 1350 cm2/V s, and a maximum 77 K mobility of 19 200 cm2/V s.
Look, D. C.,
& Sizelove, J. R.
(2001). Predicted Maximum Mobility in Bulk GaN. Applied Physics Letters, 79 (8), 1133-1135.