Submissions from 1992
Traps in Semi-insulating InP Studied by Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, and J. H. Zhao
Airglow and Aurora in the Atmospheres of Venus and Mars, Jane L. Fox
Chemistry of the Nightside Ionosphere of Venus, Jane L. Fox
Dissociative Recombination in Planetary Ionospheres, Jane L. Fox
Models of the Nightside Ionosphere of Venus, Jane L. Fox
Production and Escape of Nitrogen Atoms from Mars, Jane L. Fox
Model Calculations of the Nightside Ionospheres of Venus and Mars, Jane L. Fox, J. F. Brannon, A. I. F. Stewart, and H. S. Porter
About E. M. Strelkov's Article "Estimation of Magnetic Field of Seismoelectric Currents", Naum I. Gershenzon
Seismoelectromagnetic Field of Electrokinetic Nature, Naum I. Gershenzon
Electromagnetic Prediction of Tsunami, Naum I. Gershenzon and Mikhail B. Gokhberg
On Earthquake Precursors in Geomagnetic Field Variations of Electrokinetic Nature, Naum I. Gershenzon and Mikhail B. Gokhberg
On the Origin of Electrotelluric Disturbances Prior to Earthquake, Naum I. Gershenzon and Mikhail B. Gokhberg
Densities and Vibrational Distribution of H3+ in the Jovian Auroral Ionosphere, Y. H. Kim, Jane L. Fox, and H. S. Porter
Arsenic Antisite-Related Defects in Low-Temperature MBE Grown GaAs, K. Krambrock, M. Linde, J. M. Spaeth, David C. Look, David F. Bliss, and Wladek Walukiewicz
Ohmic Contact formation on GaAs Layers with Low-Temperature Molecular-Beam Epitaxial Caps, C. Look, H. Yamamoto, and K. Nakano
Shifted X-Ray Photoelectron Peak in Molecular-Beam Epitaxial GaAs Grown at 200 Degrees C, David C. Look, J. T. Grant, and J. R. Sizelove
Photoreflectance and X-Ray Photoelectron Spectroscopy in Lt MBE GaAs, David C. Look, J. E. Hoelscher, J. T. Grant, C. E. Stutz, K. R. Evans, and M. Numan
Alloy Scattering in P-Type Alxga1-Xas, David C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, and D. W. Whitson
Conductivity and Hall-Effect Measurements on MBE GaAs Grown at Low Temperatures, David C. Look, Greta D. Robinson, J. R. Sizelove, and C. E. Stutz
Native Donors and Acceptors in Molecular-Beam Epitaxial GaAs Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, and S. K. Brierley
Mechanisms for GaAs Surface Passivation by a Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, and J. R. Sizelove
Incorporation of Si and Al in Low Temperature MBE GaAs, M. O. Manasreh, K. R. Evans, C. E. Stutz, and David C. Look
Incorporation of Silicon and Aluminum in Low-Temperature Molecular-Beam Epitaxial GaAs, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, and Joseph Hemsky
Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization, M. G. Mier, David C. Look, D. C. Walters, and D. L. Beasley
5mW Parallel-Connected Resonant-Tunnelling Diode Oscillator, K. D. Stephan, S. C. Wong, Elliott R. Brown, K. M. Molvar, A. R. Calawa, and M. J. Manfra
Electron-Paramagnetic-Resonance Study of GaAs Grown by Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, and C. E. Stutz
Defect Models in Electron-Irradiated N-Type GaAs, B. Ziebro, Joseph W. Hemsky, and David C. Look
Submissions from 1991
VB-3 Low Shot Noise in High-Speed Resonant-Tunneling Diodes, Elliott R. Brown, C. D. Parker, A. R. Calawa, and M. J. Manfra
High-Frequency Resonant-Tunneling Oscillators, Elliott R. Brown, C. D. Parker, A. R. Calawa, M. J. Manfra, C. L. Chen, L. J. Mahoney, W. D. Goodhue, J. R. Söderströom, and T. C. McGill
Oscillations up to 712 GHz in InAs/AlSb Resonant-Tunneling Diodes, Elliott R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill
Comparison of Deep Centers in Semiinsulating Liquid-Encapsulated Czochralski and Vertical-Gradient Freeze GaAs, Z-Q. Fang and David C. Look
Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy, Z-Q. Fang and David C. Look
Infrared Quenching and Thermal Recovery of Thermally Stimulated Current Spectra in GaAs, Z-Q. Fang and David C. Look
Cross Sections and Reaction Rates of Relevance to Aeronomy, Jane L. Fox
Nitrogen Escape from Mars, Jane L. Fox
Particle Precipitation in the Atmospheres of Venus and Mars, Jane L. Fox
Structure, Luminosity, and Dynamics of the Venus Thermosphere, Jane L. Fox and Stephen W. Bougher
The Venus Ultraviolet Aurora: A Soft Electron Source, Jane L. Fox and A. I. F. Stewart
Solar Heating Efficiencies in the Thermosphere of Titan, Jane L. Fox and Roger V. Yelle
GaAs MMIC Wafer Level Mapping for Material and Process Diagnostics, Hilda Kanber, David C. Wang, E. T. Pan, and David C. Look
Wafer Level Mapping of GaAs for MMIC Fabrication, Hilda Kanber, David C. Wang, E. T. Pan, and David C. Look
The Jovian Ionospheric E Region, Y. H. Kim and Jane L. Fox
Overview of MIMIC Phase I Material/Device Correlation Study, J. M. King, R. D. Worley, J. R. Sizelove, J. K. Gillespie, T. K. Krueger, R. A. Niedhard, J. L. Brown, S. E. Cummins, and David C. Look
Effects of A Buffer Layer on Free-Carrier Depletion in N-Type GaAs, C. Look, K. R. Evans, and C. E. Stutz
On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature, David C. Look
Point Defect Characterization in III-V Semiconducting Compounds, David C. Look
On-Wafer Hall-Effect Measurement System, P. D. Mumford and David C. Look
Growth and Characterization of High Current Density, High-Speed InAs/AlSb Resonant Tunneling Diodes, J. R. Söderström, Elliott R. Brown, C. D. Parker, L. J. Mahoney, J. Y. Yao, T. G. Andersson, and T. C. McGill
Resonant-Tunnelling Diode Oscillator Using a Slot-Coupled Quasioptical Open Resonator, K. D. Stephan, Elliott R. Brown, C. D. Parker, W. D. Goodhue, C. L. Chen, and T. C.L.G. Sollner
Submissions from 1990
Observation of Optically Pumped Intersubband Emission From Quantum Wells, J. W. Bales, K. A. McIntosh, T. C.L.G. Soilner, W. D. Goodhue, and Elliott R. Brown
Influence of a Magnetic Field on Mechanical Properties of Ionic Crystals During Their Deformation, P. F. Biadzhi, Naum I. Gershenzon, D. O. Zilpimiani, P. V. Mandzhgaladze, O. A. Pokhotelov, V. Sgrin'ya, and Z. T. Chelidze
Calculation of the Intersubband Absorption Strength in Ellipsoidal-Valley Quantum Wells, Elliott R. Brown and S. J. Eglash
High-Speed Resonant-Tunneling Diodes Made From the In0.53 Ga0.47 As/AlAs Material System, Elliott R. Brown, C. D. Parker, A. R. Calawa, M. J. Manfra, T. C.L.G. Sollner, C. L. Chen, S. W. Pang, and K. M. Molvar
Activation Efficiencies for a Standard Qualification Implant in GaAs Annealed by a Rapid Thermal Process, J. O. Crist and C. Look
Origin and Behavior of Main Electron Traps in Si-Implanted GaAs, Z-Q. Fang, H. Yamamoto, and David C. Look
A Comparison of Deep Centers in Low Temperature MBE, As-Rich LEC, and Ga-Rich LEC GaAs, Z-Q. Fang, H. Yamamoto, David C. Look, K. R. Evans, and C. E. Stutz
The Production of Hot Oxygen at the Exobases of the Terrestrial Planets, Jane L. Fox
The Red and Green Lines of Atomic Oxygen in the Nightglow of Venus, Jane L. Fox
Transition Probabilities and Franck-Condon Factors for the Second Negative Band System of O2+, Jane L. Fox and Alexander Dalgarno
A Signature of Auroral Precipitation in the Nightside Ionosphere of Venus, Jane L. Fox and H. A. Taylor Jr.
Chemistry of the Nightside Ionosphere of Venus, Jane L. Fox and H. A. Taylor Jr.
On the Generation of Electrotelluric Fields by Crustal Geodynamic Processes, Naum I. Gershenzon, Mikhail B. Gokhberg, Yu. P. Kurchashov, E. B. Chirkov, V. I. Chernyi, A. V. Drumya, and M. M. Bogorodsky
Theoretical Intensity-Dependent Response of Nonlinear Periodic Structures, Paul A. Gohman, Gust Bambakidis, and Robert J. Spry
The Interaction of Point Defects With Dislocations in High-Purity Silver Above Room Temperature, P. J. Grigsby, H. M. Simpson, and Joseph W. Hemsky
Influence of Point Defects on GaAs Devices, David C. Look
Review of Hall Effect and Magnetoresistance Measurements in GaAs Materials and Devices, David C. Look
Hole Mobility, Diffusion, and Lifetime, David C. Look, A. R. Adams, and D. R. Wight
Resistivity, David C. Look, B. J. Sealy, R. L. Williams, and D. Lee
Surface and Interface Free-Carrier Depletion in GaAs Molecular Beam Epitaxial Layers: Demonstration of High Interface Charge, David C. Look, C. E. Stutz, and K. R. Evans
Surface and Interface Free-carrier Depletion in GaAs Molecular-Beam Epitaxial Layers: Demonstration of High interface Charge, David C. Look, C. E. Stutz, and K. R. Evans
Unpinning of GaAs Surface Fermi Level by 200 Degrees C Molecular Beam Epitaxial Layer, David C. Look, C. E. Stutz, and K. R. Evans
Anomalous Hall-Effect Results in Low-Temperature Molecular-Beam-Epitaxial GaAs - Hopping in a Dense El2-Like Band, David C. Look, D. C. Walters, M. O. Manasreh, J. R. Sizelove, C. E. Stutz, and K. R. Evans
Infrared-Absorption of Deep Defects in Molecular-Beam-Epitaxial GaAs-Layers Grown at 200°C - Observation of an EL(2)-Like Defect, M. O. Manasreh, David C. Look, and K. R. Evans
Observation of Deep Defects in As-Rich GaAs Grown by the Molecular Beam Epitaxy Technique at 200 °C, M. O. Manasreh, David C. Look, K. R. Evans, and C. E. Stutz
GaAs Whole-Wafer Dislocation Mapping for Qualifying Substrates, M. G. Mier, David C. Look, D. C. Walters, and J. R. Sizelove
X-Ray Double-Crystal Diffractometry Characterization of Semi-Insulating GaAs, S. Shah, J. Chaudhuri, M. G. Mier, and David C. Look
Photoconductivity Spectra, R. A. Stradling and David C. Look
Characterization of MBE GaAs Layers Grown at 200°C–300°C, C. R. Wie, K. Xie, T. T. Bardin, J. G. Pronko, David C. Look, K. R. Evans, and C. E. Stutz
Low-Temperature Grown Semi-Insulating GaAs Layer: Defect Concentration from Lattice Constant and Resistivity, C. R. Wie, K. Xie, David C. Look, K. R. Evans, and C. E. Stutz
Nonalloyed Ohmic Contacts on Low-Temperature Molecular-Beam Epitaxial GaAs: Influence of Deep Donor Band, H. Yamamoto, Z-Q. Fang, and David C. Look
In Situ Hall-Effect System for Real-Time Electron-Irradiation Studies, B. S. Ziebro, David C. Look, Joseph W. Hemsky, and J. Rice
Submissions from 1989
Determination of Shallow Minority-Acceptor Concentration in Multiply Doped Silicon, Gust Bambakidis and G. J. Brown
Effect of Quasibound-State Lifetime on the Oscillation Power of Resonant Tunneling Diodes, Elliott R. Brown, C. D. Parker, and T. C.L.G. Sollner
Oscillations up to 420 GHz in GaAs/AlAs Resonant Tunneling Diodes, Elliott R. Brown, T. C.L.G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen
The Flux, Temperature, and Energy-Dependence of Dissociation Pinning in Electron-Irradiated Gold, G. J. Brown, Joseph W. Hemsky, and H. M. Simpson
A Variable Time-Resolution MCS for Kinetic Studies, Jerry D. Clark, J. A. Guthrie, R. C. Chaney, and A. J. Cunningham
Theory of Electrokinetic Effects Occurring at the Final Stage in the Preparation of a Tectonic Earthquake, I. P. Dobrovol'sky, Naum I. Gershenzon, and Mikhail B. Gokhberg
A Signature of Auroral Activity in the Nightside Ionosphere of Venus, Jane L. Fox
Dissociative Recombination in Aeronomy, Jane L. Fox
Photodissociation of CO in the Thermosphere of Venus, Jane L. Fox
The Neutral Thermospheres of Mars and Venus, Jane L. Fox
On the Origin of Electrotelluric Disturbances Prior to Earthquake, Naum I. Gershenzon and Mikhail B. Gokhberg
Computation of Short-Range Earthquake Precursors in Electrotelluric Field, Naum I. Gershenzon, Mikhail B. Gokhberg, and I. P. Dobrovol'sky
Modelling the Connection Between Earthquake Preparation Processes and Crustal Electromagnetic Emission, Naum I. Gershenzon, Mikhail B. Gokhberg, A. V. Karakin, N. V. Petviashvili, and A. L. Rykunov
Parametric Instability of Water Drops in an Electric Field as a Possible Mechanism for Luminous Phenomena Accompanying Earthquakes, A. I. Grigoryev, Naum I. Gershenzon, and Mikhail B. Gokhberg
Solutions of the Sine-Gordon Equation by the Modulated-Wave Method and Application to a Two-State Medium, A. V. Gurevich, Naum I. Gershenzon, A. L. Krylov, and N. G. Mazur
Deviations from Bulk Transport Measurements in Semi-Insulating GaAs, N. C. Halder and David C. Look
Electrical Characterization of GaAs Materials and Devices, David C. Look
Hall-Effect Depletion Corrections in Ion-Implanted Samples: Si29 in GaAs, David C. Look
Wafer-Level Correlations of EL2, Dislocation Density, and FET Saturation Current at Various Processing Stages, David C. Look, D. C. Walters, R. T. Kemerley, J. M. King, M. G. Mier, J. S. Sewell, and J. S. Sizelove
